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  r s e m i c o n d u c t o r l l 1 0 3 a t h u r l l 1 0 3 c small signal schottky diodes fea tures mechanical da t a absolute ra tings(limiting v alues) electrical characteristics for general purpose applications the ll103 series is a metal-on-silicon junction schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. other applications are click suppressions, ef ficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. these diodes are also available in the do-35 case with the type designation sd103a to sd103c. leakage current at v r =30v v r =20v v r =10v forward voltage drop at i f =20ma i f =200ma (ratings at 25 c ambient temperature unless otherwise specified) 0.37 0.6 5 5 5 50 10 reverse recovery time at i f =i r =50ma,recover to 200ma recover to 0.1 i r junction capacitance at v r =0v ,f=1mhz v rrm v rrm v rrm mw a v v v t stg p tot t j power dissipation (infinite heat sink) peak reverse v oltage storage t emperature range junction temperature maximum single cycle surge 60hz sine wave ll103a ll103a ll103b ll103b ll103c ll103c -55 to+150 c c v v m a m a m a pf ns i fsm v f v f i r i r i r c j t rr 125 15 400 1) 40 30 20 1) v alid provided that electrodes are kept at ambient temperature case : minimelf glass case(sod-80 ) polarity: color band denotes cathode end w eight : approx. 0.05 gram minimelf dimensions in inches and (millimeters) symbols units v alue min. t yp. max. unis symbols 2- 3 6 j f 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) 0.063(1.6) 0.055(1.4) high temperature soldering guaranteed : 260 !/ 10 seconds at terminals component in accordance to rohs 2002 / 95 / ec and weee 2002 / 96 / ec jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com
r at i n g s a n d c h a r a c t e r i s t i c c u r v e s l l 1 0 3 a t h r u l l 1 0 3 c 0 0.5 10 20 30 40 50v 1 1.5v 10 10 10 10 10 10 10 10 1 1 10 10 10 10 10 10 -2 -2 3 -3 2 -1 -1 -1 3 3 2 2 0 0 1 2 3 4 0.5 1v 5 i f (ma) t j = 25 c a ? a ms figure 1. t ypical variation of forward current vs. forward. v oltage for primary conduction through the schottky barrier figure 2. t ypical high current forward conduction curve t p =300ms,duty cycle=2% figure 4. t ypical variation of re verse current at various tempera tures v f v f v r i f i f i r 0 10 20 30 40 50 1 10 figure 3. t ypical non repetitive forward surge current versus pulse width t p i f 25 c 50 c 75 c 100 c 125 c 2- 3 7 jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com
0 10 20 30 40 50 100 100ma 200ma 400ma 200c v pf figure 5. blocking deration versus temperature at various average forward currents t a v r 10 20 30 40 50v 0 1 2 2 3 3 4 4 5 5 7 7 10 100 figure 6. t ypical capacitance versus reverse voltage v r c j r at i n g s a n d c h a r a c t e r i s t i c c u r v e s l l 1 0 3 a t h r u l l 1 0 3 c 2- 38 jinan jinghen g co., l td. no .51 heping ro ad jinan p .r. china tel:86-531-86943 657 f ax:86-531-869470 96 www .jifusemicon. com


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